Low magnetic field anomaly of the Hall effect in disordered 2D systems: Interplay between weak localization and electron-electron interaction

摘要

The nonlinear behavior of the Hall resistivity at low magnetic fields insingle quantum well GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures withdegenerated electron gas is studied. It has been found that this anomaly isaccompanied by the weaker temperature dependence of the conductivity ascompared with that predicted by the first-order theory of the quantumcorrections to the conductivity. We show that both effects in stronglydisordered systems stem from the second order quantum correction caused by theeffect of weak localization on the interaction correction and vice versa. Thiscorrection contributes mainly to the diagonal component of the conductivitytensor, it depends on the magnetic field like the weak localization correctionand on the temperature like the interaction contribution.